2007. 5. 22 1/3 semiconductor technical data ktc4419 triple diffused npn transistor revision no : 3 switching regulator application. high voltage switching application. high speed dc-dc converter application. features excellent switching times. : t on =1.0 s(max.), t f =0.5 s(max.) at i c =1.5a. high collector voltage : v ceo =400v. maximum rating (ta=25 ) dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 1.5+0.25/-0.1 j k l m n p q r f q 1 2 3 l p n b g j m d n h e r k l s 0.5 typ s d a c 2.70 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 3.2 0.2 + _ 10.0 0.3 + _ 15.0 0.3 + _ 3.0 0.3 + _ 4.5 0.2 + _ 2.54 0.1 + _ + 2.6 0.2 _ 6.8 0.1 + _ 1. base 2. collector 3. emitter electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 500 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 7 v collector current dc i c 5 a pulse i cp 10 base current i b 2 a collector power dissipation (tc=25 ) p c 30 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =500v, i e =0 - - 100 a emitter cut-off current i ebo v eb =7v, i c =0 - - 100 a collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 400 - - v dc current gain h fe (1) v ce =4v, i c =0.1a 20 - - h fe (2) v ce =4v, i c =1.5a 10 - 40 collector-emitter saturation voltage v ce(sat) i c =1.5a, i b =0.3a - - 0.5 v base-emitter saturation voltage v be(sat) i c =1.5a, i b= =0.3a - - 1.0 v transition frequency f t v ce =12v, i c =0.3a - 20 - mhz switching time turn-on time t on i b1 133 ? b1 i cc v =200v i b2 i b2 20 s i =0.15a , i =-0.3a 1% b1 b2 output duty cycle input < = - - 1.0 s storage time t stg - - 2.5 fall time t f - - 0.5
2007. 5. 22 2/3 ktc4419 revision no : 3 c collector current i (a) 0 0.01 collector current i (a) c c be(sat) v - i saturation voltage v (v) 0 ce(sat) 0.01 collector current i (a) c 0 base-emitter voltage v (v) be be c i - v saturation voltage v (v) base-emitter 0 v - i h - i c collector current i (a) 0.01 fe 3 dc current gain h 10 fe c 0.05 0.1 0.5 1 5 5 50 100 common emitter v =4v ce tc=125 c tc=-55 c ce(sat) c collector-emitter 0.05 0.1 0.5 1 5 1 2 common emitter i /i =5 c b 12 1 2 3 4 5 common emitter v =4v tc=1 25 c tc=25 c tc=-55 c ce be(sat) 0.05 0.1 0.5 1 5 1 2 b c i /i =5 common emitter collector-emitter voltage v (v) ce collector current i (a) c 250 510 safe operating area 0.5 0.1 0.05 0.01 10 100 500 5 1 0.1 0.5 1 5 c 10 switching time ( s) 1 0.1 0.5 switching characteristics collector current i (a) 5 v 200v cc c i :i :i =10:1:2 b1 b2 t stg f t on t ta=25 c (continuous) i max. c c i max.(pulsed) d.c operation 10ms 1ms 100 s 50 s in temperature linearly with increase curves must be derated pulse tc=25 c single nonrepetitive v max. ceo tc=25 c = ~
2007. 5. 22 3/3 ktc4419 revision no : 3 0 collector power dissipation pc (w) 10 150 100 50 ambient temperature ta ( c) 0 pc - ta 20 30 1 tc=ta infinite heat sink 2 no heat sink 1 2 reverse bias safe operating area 0 collector-emitter voltage v (v) 100 collector current i (a) 0 ce c 200 300 400 500 600 700 1.0 2.0 3.0 4.0 5.0 6.0 i =i =5(i =-2i ) lcoil=100 h c b b b
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